Pâ•'18: Improving Switching Characteristics of pâ•'type Copper Oxide Thinâ•' film Transistors by Germanium Oxide P
![XRD of as-deposited and 500 °C annealed GeOx films on silicon substrate | Download Scientific Diagram XRD of as-deposited and 500 °C annealed GeOx films on silicon substrate | Download Scientific Diagram](https://www.researchgate.net/profile/Vijayarangamuthu-Kalimuthu/publication/327847327/figure/fig1/AS:779391143534603@1562832737194/XRD-of-as-deposited-and-500C-annealed-GeOx-films-on-silicon-substrate_Q640.jpg)
XRD of as-deposited and 500 °C annealed GeOx films on silicon substrate | Download Scientific Diagram
![PDF) Ge nanocrystals embedded in a GeOx matrix formed by thermally annealing of Ge oxide films | kulriya pawan kumar - Academia.edu PDF) Ge nanocrystals embedded in a GeOx matrix formed by thermally annealing of Ge oxide films | kulriya pawan kumar - Academia.edu](https://0.academia-photos.com/attachment_thumbnails/51224034/mini_magick20190126-23407-1tqdbiq.png?1548496870)
PDF) Ge nanocrystals embedded in a GeOx matrix formed by thermally annealing of Ge oxide films | kulriya pawan kumar - Academia.edu
![A very low temperature (170 °C) crystallization of amorphous-Ge thin film on glass via Au induced layer exchange process in amorphous-Ge/GeOx/Au/glass stack and electrical characterization - ScienceDirect A very low temperature (170 °C) crystallization of amorphous-Ge thin film on glass via Au induced layer exchange process in amorphous-Ge/GeOx/Au/glass stack and electrical characterization - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0169433220334371-ga1.jpg)
A very low temperature (170 °C) crystallization of amorphous-Ge thin film on glass via Au induced layer exchange process in amorphous-Ge/GeOx/Au/glass stack and electrical characterization - ScienceDirect
![Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1557%2Fs43580-022-00364-6/MediaObjects/43580_2022_364_Figa_HTML.png)
Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink
Rankin Film - #StartBreathing is our global campaign for GEOX directed by Rankin. Music exclusively composed by Beatbox artist Nicole Paris and all edited in-house by the Rankin Film team. http://bit.ly/28XO3Un
Rankin Film - GEOX Start Breathing - campaign shot by Rankin. Watch on our site http://rankinfilmreps.com/#v-5600 | Facebook
![Kurt J. Lesker Company | Highly Engineered GeOx layers for FinFETs by Plasma Enhanced Atomic Layer Deposition | Enabling Technology for a Better World Kurt J. Lesker Company | Highly Engineered GeOx layers for FinFETs by Plasma Enhanced Atomic Layer Deposition | Enabling Technology for a Better World](https://www.lesker.com/newweb/images/blogImages/Chart-SY-GermaniumALD_01.jpg)
Kurt J. Lesker Company | Highly Engineered GeOx layers for FinFETs by Plasma Enhanced Atomic Layer Deposition | Enabling Technology for a Better World
![Determination of the infrared absorption cross-section of the stretching vibrations of Ge–O bonds in GeOx films - ScienceDirect Determination of the infrared absorption cross-section of the stretching vibrations of Ge–O bonds in GeOx films - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S2211715622001801-ga1.jpg)